Title :
Easy and accurate empirical transistor model parameter estimation from vectorial large-signal measurements
Author :
Schreurs, D. ; Verspecht, J. ; Vandenberghe, S. ; Carchon, G. ; van der Zanden, K. ; Nauwelaers, B.
Author_Institution :
ESAT, Katholieke Univ., Leuven, Heverlee, Belgium
Abstract :
The standard empirical nonlinear model parameter estimation is often cumbersome as several measurement systems are involved. We show that the model generation complexity can be reduced tremendously by only using full two-port vectorial large-signal measurements. Furthermore, realistic operating conditions can easily be included in the optimisation procedure, as we illustrate on GaAs PHEMTs.
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; microwave transistors; millimetre wave transistors; optimisation; parameter estimation; semiconductor device measurement; semiconductor device models; GaAs; GaAs PHEMTs; empirical transistor model; optimisation procedure; realistic operating conditions; transistor model parameter estimation; vectorial large-signal measurements; Circuit simulation; Current measurement; Data mining; HEMTs; Measurement standards; Microwave devices; Parameter estimation; Phase measurement; Scattering parameters; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779869
