Title :
Design and optimization of c-Silicon solar cell using Process Compact Model (PCM)
Author :
Maiti, T.K. ; Maiti, C.K.
Author_Institution :
Electron. & ECE Dept., Indian Inst. of Technol., Kharagpur
Abstract :
We demonstrates a complete Technology CAD (TCAD) methodology that addresses the manufacturing challenges posed by rising technological complexity, increasing process variability and shrinking time-to-market windows. Using TCAD simulations as input, Process Compact Models are created to enable efficient analysis of complex and multivariate process-device relationships, with applications to enhancing process manufacturability and process control. The methodology is used for the design and optimization of silicon solar cell technologies. Transfer matrix method (TMM) is used for the calculation of solar cell characteristics; reflectance and transmittance spectra, quantum efficiency, and I-V characteristics.
Keywords :
elemental semiconductors; silicon; solar cells; I-V characteristics; Si; process compact model; quantum efficiency; reflectance spectra; solar cell; transfer matrix method; transmittance spectra; Analytical models; Computer aided manufacturing; Design automation; Design optimization; Manufacturing processes; Phase change materials; Photovoltaic cells; Process control; Time to market; Virtual manufacturing; DFM; PCM; Quantum effiency; TCAD; TFM;
Conference_Titel :
Design & Technology of Integrated Systems in Nanoscal Era, 2009. DTIS '09. 4th International Conference on
Conference_Location :
Cairo
Print_ISBN :
978-1-4244-4320-8
Electronic_ISBN :
978-1-4244-4321-5
DOI :
10.1109/DTIS.2009.4938041