Quantum compact model for ballistic double gate MOSFETs

Author

El Sabbagh, M. ; Fikry, W. ; Omar, O.A.

Author_Institution

Dept. of Eng. Phys. & Math., Ain Shams Univ., Cairo

fYear

2009

fDate

6-9 April 2009

Firstpage

144

Lastpage

146

Abstract

A proposed compact model including quantum confinement and drain induced barrier lowering (DIBL) based on the calculation of charge and injection velocity is presented. The model used a single expression for current calculation in all regions to ensure the continuity of the model over all regions of operation. The model succeeded to simulate the ballistic double gate (DG) nano MOSFETs from linear to saturation regions of operation. The validation of the model was done by comparison with the standard NANOMOS numerical simulation. The error in the saturation region is about 6% and does not exceed 10% in the linear region.

Keywords

MOSFET; nanoelectronics; quantum theory; semiconductor device models; ballistic double gate MOSFET; drain induced barrier lowering; injection velocity; nano MOSFET; quantum compact model; quantum confinement; quantum mechanical effect; Electrons; MOSFETs; Mathematical model; Mathematics; Numerical simulation; Physics; Quantum mechanics; Rough surfaces; Surface roughness; Voltage; DIBL; Double gate MOSFETs; ballistic current; quantum mechanical effects;

fLanguage

English

Publisher

ieee

Conference_Titel

Design & Technology of Integrated Systems in Nanoscal Era, 2009. DTIS '09. 4th International Conference on

Conference_Location

Cairo

Print_ISBN

978-1-4244-4320-8

Electronic_ISBN

978-1-4244-4321-5

Type

conf

DOI

10.1109/DTIS.2009.4938043

Filename

4938043