Title :
Resistive FET mixer conversion loss and IMD optimization by selective drain bias
Author :
Garcia, J.A. ; Pedro, J.C. ; De la Fuente, M.L. ; Carvalho, N.B. ; Mediavilla, A. ; Tazon, A.
Author_Institution :
Dept Ingenieria de Comunicaciones, Cantabria Univ., Santander, Spain
Abstract :
This paper describes a dedicated nonlinear MESFET model extraction technique, which was used to accurately characterize the device´s channel resistance nonlinearity. Plotting Ids(Vgs,Vds) Taylor series expansion coefficients across V/sub GS/ and V/sub DS/ revealed not only the presence of important minimum conversion loss bias, but also of in-band IMD sweet spots that were then used to optimize a FET resistive mixer performance.
Keywords :
MESFET circuits; UHF mixers; circuit optimisation; intermodulation distortion; losses; microwave mixers; nonlinear network analysis; semiconductor device models; IMD optimization; Taylor series expansion coefficients; channel resistance nonlinearity; mixer conversion loss; nonlinear MESFET model extraction technique; resistive FET mixer; selective drain bias; Dynamic range; FETs; Intrusion detection; Linearity; MESFET circuits; Microwave circuits; Microwave devices; Microwave theory and techniques; Switches; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779881
