Title :
BiCMOS MOSFET high frequency features for radiofrequency (RF) applications. Hot carrier effects on dynamic and noise parameters, impact on RF design features
Author :
Gloria, D. ; Perrotin, A. ; Gonella, R. ; Morin, G.
Author_Institution :
Central R&D, ST Microelectron., Crolles, France
Abstract :
BiCMOS 0.35 /spl mu/m MOSFET high frequency (HF) features for radiofrequency (RF) applications are presented: Ft, Fmax and HF noise parameters (the minimum noise figure: NFmin, the noise equivalent resistance: Rn and the source optimum reflection coefficient: GammaOPT). The effects of Hot Carrier (HC) degradations have been studied on these features, the whole characterization being achieved on a full automated on wafer HF measurement station. A comparison with bipolar device characteristics is made. In conclusion, even for stress conditions with high level of HC degradation (20% degradation on Ids, 8% on Ft, 10% on Fmax and 50% on real part of GammaOPT), MOSFET remains attractive for RF design achievement and stability in term of noise figure.
Keywords :
BiCMOS integrated circuits; MMIC; MOSFET; UHF field effect transistors; UHF integrated circuits; hot carriers; microwave field effect transistors; semiconductor device measurement; semiconductor device noise; semiconductor device reliability; 0.35 micron; BiCMOS; MOSFET; RF applications; bipolar device characteristics; dynamic parameters; high frequency features; hot carrier effects; minimum noise figure; noise equivalent resistance; noise parameters; on wafer HF measurement station; source optimum reflection coefficient; stability; stress conditions; Acoustic reflection; BiCMOS integrated circuits; Degradation; Electrical resistance measurement; Hafnium; Hot carriers; MOSFET circuits; Noise figure; Radio frequency; Stress;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779888
