Title :
A 3 V GaAs MESFET monolithic transmitter with cross-coupled common-source, common-gate pair linear mixer for cellular hand-held phones
Author :
Min-Gun Kim ; Jae-Kyoung Mun ; Jong-Won Lim ; Chung-Hwan Kim ; Chang-Seok Lee ; Jaejin Lee
Author_Institution :
Compound Semicond. Dept., Electron. & Telecommun. Res. Inst., Taejon, South Korea
Abstract :
A linear mixer with cross-coupled common-source, common-gate pair FET´s was proposed and its performances were verified in the GaAs MESFET monolithic transmitter for cellular hand-held phones. The transmitter showed measured conversion gain of 31.2/spl sim/31.6 dB at LO input power of -5/spl sim/0 dBm, 1 dB compression point of power gain was 9.5 dBm at output power, and two-tone (with offset frequency /spl Delta/f=442.5 kHz) third-order intermodulation distortion (IMD3) at a total output power of 0 dBm was to be -47 dBc with a 3 V of supply voltage and 43 mA of current consumption.
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC mixers; UHF integrated circuits; UHF mixers; cellular radio; field effect MMIC; gallium arsenide; intermodulation distortion; radio transmitters; telephone sets; 3 V; 31.2 to 31.6 dB; 43 mA; GaAs; GaAs MESFET monolithic transmitter; cellular hand-held phones; conversion gain; cross-coupled common-source common-gate pair FETs; intermodulation distortion; linear mixer; third-order IMD; Current measurement; Distortion measurement; FETs; Frequency measurement; Gain measurement; Gallium arsenide; MESFETs; Power generation; Power measurement; Transmitters;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.779891
