DocumentCode :
3421364
Title :
High-Q integrated inductors on trenched silicon islands
Author :
Raieszadeh, Mina ; Monajemi, Pejman ; Yoon, Sang-Woong ; Laskar, Joy ; Ayazi, Farrokh
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2005
fDate :
30 Jan.-3 Feb. 2005
Firstpage :
199
Lastpage :
202
Abstract :
An implementation of high quality factor (Q) copper (Cu) inductors on CMOS-grade silicon substrates using a fully CMOS-compatible process is presented. A low-temperature fabrication sequence is employed to reduce the loss of Si wafers at RF frequencies using micromachining technique. This method does not require air suspension of the inductors, resulting in mechanically-robust structures that are compatible with any packaging technology. An InH inductor fabricated on this low-loss micromachined Si substrate exhibits a high peak Q of 51 at 1.0GHz (40 at 2.4GHz) with a self-resonant frequency larger than 10GHz.
Keywords :
Q-factor; UHF integrated circuits; copper; indium compounds; inductors; micromachining; silicon; substrates; 1 GHz; 2.4 GHz; CMOS-compatible process; Cu-Si; InH; copper inductors; high-Q integrated inductors; low-temperature fabrication sequence; mechanically-robust structures; micromachining technique; packaging technology; quality factor; silicon substrates; trenched silicon islands; Conductivity; Conductors; Copper; Dielectric substrates; Inductors; Numerical analysis; Resists; Scanning electron microscopy; Silicon; Spirals;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2005. MEMS 2005. 18th IEEE International Conference on
ISSN :
1084-6999
Print_ISBN :
0-7803-8732-5
Type :
conf
DOI :
10.1109/MEMSYS.2005.1453901
Filename :
1453901
Link To Document :
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