• DocumentCode
    3421483
  • Title

    DfT technique for RF PLLs using built-in monitors

  • Author

    Asquini, A. ; Bounceur, Ahcène ; Mir, Salvador ; Badets, F. ; Carbonero, J.-L. ; Bouzaida, L.

  • Author_Institution
    STMicroelectronics, Crolles
  • fYear
    2009
  • fDate
    6-9 April 2009
  • Firstpage
    210
  • Lastpage
    215
  • Abstract
    On-chip test measures for new generation analog and mixed-signal RF circuits will replace performances that are becoming too costly or impossible to measure on-chip and/or on-tester. On one hand, these on-chip measurements must not degrade the DUT performances during the operation mode. On the other hand they must be highly correlated with the circuit performances. They should help to reduce test time and resources for production test while maintaining standard quality. For RF PLLs, the measurement of performances such as jitter, for example, is becoming unfeasible with increasing frequencies. This paper presents a DfT technique for RF PLLs using three built-in monitors that take measures highly correlated with device performances. A simple lock state test is required in a low cost digital tester. The built-in monitors are intended to give a Go/No-Go digital output. An evaluation of catastrophic fault coverage of the test technique is carried out on the VCO block through fault simulation. Parametric yield loss and defect level are evaluated using a statistical model of the VCO obtained by a Copulas-based probability density estimation technique. The case-study is a 65 nm CMOS RF PLL designed and manufactured at STMicroelectronics.
  • Keywords
    CMOS integrated circuits; built-in self test; design for testability; fault simulation; integrated circuit testing; logic testing; phase locked loops; statistical analysis; voltage-controlled oscillators; CMOS RF PLL; Copulas-based probability density estimation technique; DfT technique; VCO block; built-in monitors; catastrophic fault coverage; defect level; fault simulation; lock state test; parametric yield loss; size 65 nm; statistical VCO model; Circuit faults; Circuit testing; Costs; Degradation; Frequency measurement; Jitter; Performance evaluation; Production; Radio frequency; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design & Technology of Integrated Systems in Nanoscal Era, 2009. DTIS '09. 4th International Conference on
  • Conference_Location
    Cairo
  • Print_ISBN
    978-1-4244-4320-8
  • Electronic_ISBN
    978-1-4244-4321-5
  • Type

    conf

  • DOI
    10.1109/DTIS.2009.4938057
  • Filename
    4938057