Title :
Investigation of EEPROM memories reliability during endurance and retention tests
Author :
Plantier, J. ; Aziza, H. ; Portal, J.M. ; Reliaud, C.
Author_Institution :
CNRS, IMT Technopole Chateau Gombert, Marseille
Abstract :
To ensure reliability of EEPROM devices, it is significant to monitor the evolution of the memory array threshold voltage (VT) distribution. In this work, impact of endurance and retention tests is evaluated on EEPROM VT distributions. To track accurately the evolution of the VT distribution, an innovative experimental plan is setup and experimental results are deeply analyzed.
Keywords :
EPROM; integrated circuit reliability; integrated circuit testing; integrated memory circuits; logic testing; voltage distribution; EEPROM memories reliability; endurance test; memory array threshold voltage distribution; retention test; Data mining; EPROM; Monitoring; Nonvolatile memory; Performance evaluation; Phased arrays; Portals; Testing; Threshold voltage; Tunneling; EEPROM; Endurance-retention tests; oxide degradation; reliability;
Conference_Titel :
Design & Technology of Integrated Systems in Nanoscal Era, 2009. DTIS '09. 4th International Conference on
Conference_Location :
Cairo
Print_ISBN :
978-1-4244-4320-8
Electronic_ISBN :
978-1-4244-4321-5
DOI :
10.1109/DTIS.2009.4938063
