DocumentCode
3421812
Title
A vertically guided MEMS probe card with deeply recessed trench-type cantilever
Author
Bong-Hwan Kirn ; Chung, Doo-Yin ; Chung, Chi-Hwan ; Chun, Tae-Un ; Seok, Seon-Ho ; Kim, Hymn-Cheol ; Chun, Kuljin
Author_Institution
Seoul Nat. Univ., South Korea
fYear
2005
fDate
30 Jan.-3 Feb. 2005
Firstpage
271
Lastpage
274
Abstract
We developed a vertically guided MEMS probe card with deeply recessed trench-type cantilever. This probe card was designed to achieve a displacement of 50 μm at a force of 1.5 gram. The measured contact resistance was about 0.4 ohm for 50 μm displacement. The leakage current between the shortest tips was approximately 10 pA. To implement fine pitch and make a vertically guided structure, a cantilever beam was formed inside the trench after deep RIE silicon etching. This probe card was capable of a 35 μm pad pitch.
Keywords
contact resistance; leakage currents; micromechanical devices; probes; sputter etching; 50 micron; RIE silicon etching; cantilever beam; contact resistance measurement; fine pitch; leakage current; trench type cantilever; vertically guided MEMS probe card; Automatic testing; Circuit testing; Contact resistance; Etching; Fabrication; Integrated circuit interconnections; Micromechanical devices; Probes; Silicon; Structural beams;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2005. MEMS 2005. 18th IEEE International Conference on
ISSN
1084-6999
Print_ISBN
0-7803-8732-5
Type
conf
DOI
10.1109/MEMSYS.2005.1453919
Filename
1453919
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