Title :
Accurate doping profile determination using TED/QM models extensible to sub-quarter micron nMOSFETs
Author :
Voorde, P.V. ; Griffin, P.B. ; Yu, Z. ; Oh, S.-Y. ; Dutton, R.W.
Author_Institution :
ULSI Res. Lab., Hewlett-Packard Co., Palo Alto, CA, USA
Abstract :
Accurate doping profiles are needed to simulate device characteristics. We use capacitance-voltage curves to interrogate the doping profiles, threshold voltage, body effect, poly depletion and oxide thickness on a range of technology generations down to 0.18 /spl mu/m. Proper modeling of both transient enhanced diffusion (TED) and quantum mechanical (QM) effects is essential to ensure the simulations match all aspects of the C-V data. The agreement confirms that the predicted doping profiles are accurate. Device simulations using these doping profiles give the correct threshold voltage, body effect and DIBL characteristics.
Keywords :
MOSFET; characteristics measurement; diffusion; doping profiles; semiconductor doping; semiconductor process modelling; 0.18 micron; DIBL characteristics; TED/QM models; body effect; capacitance-voltage curves; device characteristics; doping profile determination; oxide thickness; poly depletion; quantum mechanical effects; sub-quarter micron nMOSFETs; technology generations; threshold voltage; transient enhanced diffusion; Calibration; Capacitance measurement; Capacitance-voltage characteristics; Doping profiles; Laboratories; MOS devices; MOSFETs; Quantum mechanics; Semiconductor process modeling; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554103
