A new millimeter-wave IC on Si substrate using MBB technology

Author

Yoshida, Takafumi ; Fujimoto, Hiroshi ; Hatada, Kazuyoshi ; Ikeda, Yasuhiro ; Takahashi, Koichi ; Fujita, S.

Author_Institution

Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka

fYear

1995

fDate

4-6 Dec 1995

Firstpage

56

Lastpage

59

Abstract

A new millimeter-wave hybrid IC, constructed by heterojunction transistors mounted using MBB (Micro Bump Bonding) technology and microstrip lines formed on an Si substrate, is developed. The millimeter-wave characteristics of the MBB region are estimated. An equivalent circuit model is proposed. Calculated and measured characteristics up to 60 GHz are in satisfactory agreement. Designed and measured characteristics of several amplifiers are also presented

Keywords

equivalent circuits; hybrid integrated circuits; integrated circuit measurement; microassembling; microstrip lines; millimetre wave amplifiers; millimetre wave integrated circuits; 45 GHz; 60 GHz; GaAs; GaAs heterojunction transistors; Si; Si substrate; TEG chip; amplifiers; equivalent circuit model; measured characteristics; micro bump bonding technology; microstrip lines; millimeter-wave characteristics; millimeter-wave hybrid IC; single stage amplifier; Bonding; Equivalent circuits; Heterojunctions; Hybrid integrated circuits; Microstrip; Millimeter wave integrated circuits; Millimeter wave measurements; Millimeter wave technology; Millimeter wave transistors; Submillimeter wave integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Manufacturing Technology Symposium, 1995, Proceedings of 1995 Japan International, 18th IEEE/CPMT International

Conference_Location

Omiya

Print_ISBN

0-7803-3622-4

Type

conf

DOI

10.1109/IEMT.1995.540994

Filename

540994