Title :
A new millimeter-wave IC on Si substrate using MBB technology
Author :
Yoshida, Takafumi ; Fujimoto, Hiroshi ; Hatada, Kazuyoshi ; Ikeda, Yasuhiro ; Takahashi, Koichi ; Fujita, S.
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka
Abstract :
A new millimeter-wave hybrid IC, constructed by heterojunction transistors mounted using MBB (Micro Bump Bonding) technology and microstrip lines formed on an Si substrate, is developed. The millimeter-wave characteristics of the MBB region are estimated. An equivalent circuit model is proposed. Calculated and measured characteristics up to 60 GHz are in satisfactory agreement. Designed and measured characteristics of several amplifiers are also presented
Keywords :
equivalent circuits; hybrid integrated circuits; integrated circuit measurement; microassembling; microstrip lines; millimetre wave amplifiers; millimetre wave integrated circuits; 45 GHz; 60 GHz; GaAs; GaAs heterojunction transistors; Si; Si substrate; TEG chip; amplifiers; equivalent circuit model; measured characteristics; micro bump bonding technology; microstrip lines; millimeter-wave characteristics; millimeter-wave hybrid IC; single stage amplifier; Bonding; Equivalent circuits; Heterojunctions; Hybrid integrated circuits; Microstrip; Millimeter wave integrated circuits; Millimeter wave measurements; Millimeter wave technology; Millimeter wave transistors; Submillimeter wave integrated circuits;
Conference_Titel :
Electronic Manufacturing Technology Symposium, 1995, Proceedings of 1995 Japan International, 18th IEEE/CPMT International
Conference_Location :
Omiya
Print_ISBN :
0-7803-3622-4
DOI :
10.1109/IEMT.1995.540994
