Reduction of low-frequency noise in Si MOSFETs by using nanowire channel

Author

Ohmori, Kenji ; Feng, Wenjie ; Hettiarachchi, R. ; Lee, Youngjoo ; Sato, Seiki ; Kakushima, K. ; Sato, Mitsuhisa ; Fukuda, Kenji ; Niwa, Masaaki ; Yamabe, K. ; Shiraishi, Kotaro ; Iwai, Hisato ; Yamada, Koji

Author_Institution

Grad. Sch. of Pure & Appl. Sci., Univ. of Tsukuba, Tsukuba, Japan

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

4

Abstract

We have investigated the noise spectral density of nanowire and planar FETs. It was experimentally found that the nanowire FET shows lower noise density than the planar FET. By a simulation using Poisson-Schrödinger equations, the distribution of inversion carriers in the nanowire channel is located further from the interface due to quantum confinement, which well explains the observed lower noise density of nanowire FET.

Keywords

MOSFET; Poisson equation; Schrodinger equation; elemental semiconductors; nanowires; silicon; Poisson-Schrodinger equations; Si; Si MOSFET; inversion carrier distribution; low-frequency noise; nanowire FET; nanowire channel; noise density; noise spectral density; planar FET; quantum confinement; Electron traps; FETs; Fluctuations; Logic gates; Mathematical model; Noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467928

Filename

6467928