DocumentCode :
3422189
Title :
Enhanced nitrogen plasma immersion passivation method for high-K/Ge stack formation
Author :
Meng Lin ; Quanxin Yun ; Min Li ; Zhiqiang Li ; Xia An ; Ming Li ; Xing Zhang ; Ru Huang
Author_Institution :
Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China
fYear :
2012
fDate :
Oct. 29 2012-Nov. 1 2012
Firstpage :
1
Lastpage :
3
Abstract :
In this paper, an enhanced Ge surface passivation method by nitrogen plasma immersion with adding RIE power is presented and experimentally demonstrated. With the acceleration effect resulting from electric field induced by proper RIE power, more nitrogen plasma will drift to Ge surface to passivate the dangling bonds. It is shown that nitrogen plasma immersion with RIE power is efficient in suppressing Ge suboxide growth during high-K dielectric deposition, reducing interface states and improving the C-V characteristic of both p-MOS and n-MOS capacitors in terms of flat-band voltage and hysteresis.
Keywords :
MOS capacitors; MOSFET; dangling bonds; elemental semiconductors; germanium; high-k dielectric thin films; interface states; nitrogen; passivation; plasma materials processing; semiconductor growth; C-V characteristic; Ge; N; RIE power; acceleration effect; dangling bonds; electric field; enhanced germanium surface passivation method; enhanced nitrogen plasma immersion passivation method; high-k dielectric deposition; high-k dielectric thin films; interface state reduction; n-MOS capacitors; p-MOS capacitors; stack formation; suboxide growth suppression; Capacitance-voltage characteristics; Dielectrics; Interface states; Nitrogen; Passivation; Plasmas;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
Type :
conf
DOI :
10.1109/ICSICT.2012.6467937
Filename :
6467937
Link To Document :
بازگشت