Optimization of channel profiles for ultra-short MOSFETs by quantum simulation

Author

Fiegna, C. ; Abramo, A.

Author_Institution

Inst. of Eng., Ferrara Univ., Italy

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

815

Lastpage

818

Abstract

In this paper, the self-consistent solution of l-D Poisson and Schrodinger equations is performed on doping profiles suitable for the fabrication of advanced ultra-short n-MOSFETs. Different issues are considered and investigated, including quantum-induced threshold voltage shifts, low-field electron effective mobility and gate-to-channel capacitance. The reported results give indications for the optimization of n-MOS channel doping profiles. In addition, the more advanced double-gate structure is analyzed and the reasons for possible advantages over more conventional single-gate ones (either SOI- or bulk-type) are investigated.

Keywords

MOSFET; Schrodinger equation; capacitance; doping profiles; electron mobility; inversion layers; semiconductor device models; semiconductor doping; semiconductor process modelling; 1D Schrodinger equations; channel profile optimisation; doping profiles; double-gate structure; gate-to-channel capacitance; lD Poisson equations; low-field electron effective mobility; quantum simulation; quantum-induced threshold voltage shifts; self-consistent solution; single-gate structure; ultra-short MOSFETs; Degradation; Doping profiles; Electron mobility; Fabrication; MOSFETs; Physics; Quantization; Quantum capacitance; Semiconductor process modeling; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.554104

Filename

554104