Title :
Porous silicon-a new material for MEMS
Author_Institution :
Siemens AG, Munich, Germany
Abstract :
A technique for the formation of pore arrays with high aspect ratios by electrochemical etching of n-type silicon wafers in hydrofluoric acid is presented. New devices such as a silicon based capacitor or photonic bandgap materials for the infrared regime are fabricated based on this new technology
Keywords :
anodisation; capacitors; elemental semiconductors; etching; light emitting diodes; micromachining; micromechanical devices; photonic band gap; porous materials; silicon; I-V characteristic; MEMS material; Si; anodisation; capacitor; dot pattern; electrochemical etching; elemental semiconductor; high aspect ratios; infrared regime; macroporous; mesoporous; microporous; n-type wafers; photonic bandgap materials; pore arrays formation; porous silicon; Conductivity; Current density; Electrodes; Etching; Lighting; Mesoporous materials; Micromechanical devices; Silicon; Space charge; Substrates;
Conference_Titel :
Micro Electro Mechanical Systems, 1996, MEMS '96, Proceedings. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems. IEEE, The Ninth Annual International Workshop on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-2985-6
DOI :
10.1109/MEMSYS.1996.493820
