Dielectric relaxation model in high-k materials: Simplified Kohlrausch-Williams-Watts function

The dielectric relaxation in the high-k materials, which would cause the metal-oxide-semiconductor field-effect transistor deterioration, is able to be fitted by several models. A novel model is proposed to simplify the original Kohlrausch-Williams-Watts (KWW) model. The proposed model has an analytical expression respectively in both high and low frequency domain. A critical comparison is made between the simplified model and the original model. The simplified KWW model is able to describe the dielectric relaxation data of high-k materials to a high degree of accuracy.