Micro mechanical single crystal silicon fracture studies torsion and bending

Author

Saif, M.T.A. ; MacDonald, N.C.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

fYear

1996

fDate

11-15 Feb 1996

Firstpage

105

Lastpage

109

Abstract

We introduce a micro electro mechanical system to characterize materials as their size is reduced to submicron scale. We employ the system to study the strength of a single crystal silicon pillar subjected to twisting and bending. The minimum width of the pillar is 0.5 μm. Its length is less than 10 μm. It twists by more than 20° before failure. The maximum normal and shear stress at failure are estimated to be 20 GPa and 8.5 GPa respectively

Keywords

bending; calibration; elemental semiconductors; fracture; fracture mechanics; fracture toughness testing; mechanical variables measurement; micromechanical devices; silicon; torsion; 10 mum; 20 GPa; 5 mum; 8.5 GPa; Si; Si pillar; bending; failure; micromechanical fracture; normal stress; shear stress; single crystal silicon fracture; submicron scale; torsion; twisting; Composite materials; Crystalline materials; Fatigue; Materials testing; Mechanical factors; Mechanical systems; Nanofabrication; Silicon; Stress; System testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 1996, MEMS '96, Proceedings. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems. IEEE, The Ninth Annual International Workshop on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-2985-6

Type

conf

DOI

10.1109/MEMSYS.1996.493837

Filename

493837