DocumentCode :
3423124
Title :
A liquid-based gravity-driven etching-stop technique and its application to wafer level cantilever thickness control of AFM probes
Author :
Wei-Chih Lin ; Liang, Chao-Chiun ; Tsai, Ching-Hsiang ; Hsieh, Gen-Wen ; Lung-Jieh Yang
Author_Institution :
Electron. Res. & Service Organ. (ERSO), Ind. Technol. Res. Inst. (ITRI), Hsin-Chu, Taiwan
fYear :
2005
fDate :
30 Jan.-3 Feb. 2005
Firstpage :
500
Lastpage :
503
Abstract :
This paper mainly describes a liquid based gravity driven etching stop technique used for cantilever thickness control of atomic force microscope (AFM) probes on the wafer level. The technique makes use of the method of opposite etching trenches or the depth rulers. A pair of opposite trenches surrounds several AFM probes on both sides of the wafer to form probe chips. The trench depth on the cantilever front side is equal to the designed thickness of cantilevers. In the final step of the fabrication process for AFM probes, the wafer is etched by the KOH etchant to form the probe handles. The probe chips will be separated from the wafer simultaneously with the penetration of wafers at the trenches. The separated probes fall into the diiodomethane (CH2I2) solution beneath the KOH etchant and the wet etching stops automatically. The cantilever thickness of the AFM probes can then be wafer level controlled by the proposed etching stop technique.
Keywords :
atomic force microscopy; etching; iodine compounds; micromechanical devices; potassium compounds; thickness control; KOH; KOH etchant; atomic force microscope probes; depth rulers; diiodomethane; liquid based gravity driven etching stop technique; opposite etching trenches; probe chips; probe handles; trench depth; wafer level cantilever thickness control; wet etching; Anisotropic magnetoresistance; Atomic force microscopy; Biomembranes; Etching; Fabrication; Heating; Microstructure; Probes; Silicon; Thickness control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2005. MEMS 2005. 18th IEEE International Conference on
ISSN :
1084-6999
Print_ISBN :
0-7803-8732-5
Type :
conf
DOI :
10.1109/MEMSYS.2005.1453976
Filename :
1453976
Link To Document :
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