DocumentCode
34232
Title
Germanane: A Low Effective Mass and High Bandgap 2-D Channel Material for Future FETs
Author
Ghosh, Ram Krishna ; Brahma, Madhuchhanda ; Mahapatra, Santanu
Author_Institution
Dept. of Electron. Syst. Eng., Indian Inst. of Sci., Bangalore, India
Volume
61
Issue
7
fYear
2014
fDate
Jul-14
Firstpage
2309
Lastpage
2315
Abstract
We investigate the electronic properties of Germanane and analyze its importance as 2-D channel material in switching devices. Considering two types of morphologies, namely, chair and boat, we study the real band structure, the effective mass variation, and the complex band structure of unstrained Germanane by density-functional theory. The chair morphology turns out to be a more effective channel material for switching devices than the boat morphology. Furthermore, we study the effect of elastic strain, van der Waals force, and vertical electric field on these band structure properties. Due to its very low effective mass with relatively high-energy bandgap, in comparison with the other 2-D materials, Germanane appears to provide superior performance in switching device applications.
Keywords
density functional theory; energy gap; field effect transistors; tunnel transistors; TFET; boat morphology; chair morphology; complex band structure; density-functional theory; elastic strain effect; electronic properties; high bandgap 2D channel material; high-energy bandgap; low effective mass; switching devices; tunnel field-effect transistor; unstrained germanane; Boats; Effective mass; Materials; Morphology; Photonic band gap; Tensile strain; 2-D crystal; MOSFET; ab initio simulation; effective mass; real and complex band structure; tunnel field-effect transistor (TFET); tunnel field-effect transistor (TFET).;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2014.2325136
Filename
6824805
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