Title :
α(6H)-SiC pressure sensors for high temperature applications
Author :
Okojie, Robert S. ; Ned, Alex A. ; Kurtz, Anthony D. ; Carr, William N.
Author_Institution :
Kulite Semicond. Products, Leonia, NJ, USA
Abstract :
A batch-microfabricated 6H-SiC diaphragm-based piezoresistive pressure sensors with working temperature range between 80°F to 500°F had been produced. The net output voltage shows an output voltage of 131.59 mV at full-scale pressure of 1000 psi. The net output voltage response to temperature up to 500°F is also presented. The Temperature Coefficient of Resistance (TCR) of the device exhibits a TCR of -3.07%/100°F at 180°F and eventually becomes a positive value of 4.24%/100°F at 500°F. The Temperature Coefficient of Gage Factor (TCGF) exhibits negative values of -15%/100°F and -10%/100°F at 180°F and 500°F, respectively. The problem of micropipes in 6H-SiC was effectively resolved, making it possible to fabricate thin diaphragms of about 25 μm
Keywords :
high-temperature techniques; microsensors; piezoresistive devices; pressure sensors; semiconductor technology; silicon compounds; 1000 psi; 131.59 mV; 180 F; 25 mum; 500 F; 6H-SiC diaphragm; 80 to 500 F; Gage Factor; SiC; SiC pressure sensors; Temperature Coefficient of Resistance; high temperature applications; micropipes; output voltage; piezoresistive pressure sensors; Etching; Fabrication; Mechanical sensors; Piezoresistance; Resistors; Sensor phenomena and characterization; Silicon carbide; Temperature distribution; Temperature sensors; Voltage;
Conference_Titel :
Micro Electro Mechanical Systems, 1996, MEMS '96, Proceedings. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems. IEEE, The Ninth Annual International Workshop on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-2985-6
DOI :
10.1109/MEMSYS.1996.493844
