DocumentCode :
3423583
Title :
Multifunctional humidity-gas sensor fabricated on silicon substrate
Author :
Hara, Kazuhiro ; Kawashima, Hidekazu
Author_Institution :
Dept. of Electr. Eng., Tokyo Denki Univ., Japan
fYear :
1995
fDate :
4-6 Dec 1995
Firstpage :
158
Lastpage :
161
Abstract :
This paper describes a multifunctional humidity-gas sensor developed with thin-film technology, which is compatible with IC fabrication processes. The sensor is small and inexpensive, being fabricated on a silicon substrate using photolithography. The sensing material is a semiconducting Fe2O3-based thin film which is deposited by rf sputtering on a porous Al2O3 film. The impedance is measured between the top electrode (Pt) and the bottom electrode (Al). This sensor is sensitive to humidity, especially in middle and high humidity ranges at room temperature, while it is also sensitive to combustible gases such as hydrogen at 400°C. The response time is short enough from a practical point of view
Keywords :
gas sensors; humidity sensors; iron compounds; photolithography; semiconductor thin films; sputter deposition; thin film devices; 400 C; Al bottom electrode; IC fabrication process; Pt top electrode; Pt-Fe2O3-Al2O3-Al-Al 2O3-SiO2-Si; Si; Si substrate; combustible gas sensitivity; humidity sensitivity; impedance measurement; multifunctional humidity-gas sensor; photolithography; porous Al2O3 film; response time; rf sputtering; semiconducting Fe2O3-based thin film; thin-film technology; Electrodes; Fabrication; Humidity; Semiconductor thin films; Sensor phenomena and characterization; Silicon; Sputtering; Substrates; Temperature sensors; Thin film sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Manufacturing Technology Symposium, 1995, Proceedings of 1995 Japan International, 18th IEEE/CPMT International
Conference_Location :
Omiya
Print_ISBN :
0-7803-3622-4
Type :
conf
DOI :
10.1109/IEMT.1995.541017
Filename :
541017
Link To Document :
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