Title :
Microwave microstrip attenuators for GaAs monolithic integrated circuits
Author :
Zagorodny, Andrey S. ; Voronin, Nikolay N. ; Yunusov, Igor V. ; Goshin, Gennady G. ; Fateev, Alexey V. ; Popkov, Alexander Y.
Author_Institution :
Tomsk State Univ. of Control Syst. & Radioelectron., Tomsk, Russia
Abstract :
Fixed attenuation microstrip attenuators calculations and T-attenuators with thin-film cruciform resistor prototypes experiments are represented. In the frequency range from 0 to 40 GHz T-attenuator attenuation irregularity is no more than 0.1 dB at 6 and 3 dB. Calculations were made considering the device as a combination of microstrip lines with parasitic parameters. L-2L de-embedding technique was used for experiment analysis.
Keywords :
III-V semiconductors; MMIC; attenuators; gallium arsenide; microstrip lines; thin film resistors; GaAs; L-2L deembedding technique; T-attenuator attenuation irregularity; fixed attenuation microstrip attenuator; frequency 0 GHz to 40 GHz; microstrip line; microwave microstrip attenuator; monolithic integrated circuit; parasitic parameter; thin-film cruciform resistor prototype; Attenuation; Attenuators; Equivalent circuits; Gain; Microstrip; Resistors; Scattering parameters; de-embedding; fixed attenuator; gallium arsenide; microstrip line;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2012 IEEE 13th International Conference and Seminar of Young Specialists on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-1-4673-2517-2
DOI :
10.1109/EDM.2012.6310189
