Title :
Characterization of GaAs(001) step-terraced morphology formation
Author :
Akhundov, Igor O. ; Kozhukhov, Anton S. ; Alperovich, Vitaly L.
Author_Institution :
Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia
Abstract :
Step-terraced morphology formation of a crystal surface is described by means of two-dimensional autocorrelation functions and Fourier transforms of the surface relief and by the full length of monatomic steps. This approach is applied for characterization of thermal smoothing kinetics of GaAs(001) “epi-ready” substrates in the conditions close to equilibrium between the surface and gallium and arsenic vapors.
Keywords :
Fourier transforms; III-V semiconductors; crystal structure; gallium arsenide; semiconductor epitaxial layers; surface morphology; Fourier transforms; GaAs; GaAs(001) step-terraced morphology formation; arsenic vapor; crystal surface; epiready substrates; gallium vapor; surface relief; thermal smoothing kinetics; two-dimensional autocorrelation functions; Annealing; Morphology; Physics; Rough surfaces; Smoothing methods; Surface morphology; Surface roughness; Fourier transform; autocorrelation function; gallium arsenide; monatomic step; step-terraced morphology; surface;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2012 IEEE 13th International Conference and Seminar of Young Specialists on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-1-4673-2517-2
DOI :
10.1109/EDM.2012.6310193
