Characterization of GaAs(001) step-terraced morphology formation

Author

Akhundov, Igor O. ; Kozhukhov, Anton S. ; Alperovich, Vitaly L.

Author_Institution

Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia

fYear

2012

fDate

2-6 July 2012

Firstpage

9

Lastpage

12

Abstract

Step-terraced morphology formation of a crystal surface is described by means of two-dimensional autocorrelation functions and Fourier transforms of the surface relief and by the full length of monatomic steps. This approach is applied for characterization of thermal smoothing kinetics of GaAs(001) “epi-ready” substrates in the conditions close to equilibrium between the surface and gallium and arsenic vapors.

Keywords

Fourier transforms; III-V semiconductors; crystal structure; gallium arsenide; semiconductor epitaxial layers; surface morphology; Fourier transforms; GaAs; GaAs(001) step-terraced morphology formation; arsenic vapor; crystal surface; epiready substrates; gallium vapor; surface relief; thermal smoothing kinetics; two-dimensional autocorrelation functions; Annealing; Morphology; Physics; Rough surfaces; Smoothing methods; Surface morphology; Surface roughness; Fourier transform; autocorrelation function; gallium arsenide; monatomic step; step-terraced morphology; surface;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2012 IEEE 13th International Conference and Seminar of Young Specialists on

Conference_Location

Erlagol, Altai

Print_ISBN

978-1-4673-2517-2

Type

conf

DOI

10.1109/EDM.2012.6310193

Filename

6310193