Title :
6.5 mW CMOS low noise amplifier at 1.9 GHz
Author :
Yang, Shijun ; Mason, Ralph ; Plett, Calvin
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
Abstract :
A 1.9 GHz low noise amplifier has been designed in a standard CMOS .35 micron process. The amplifier provides a gain of 21 dB with a noise figure only 1.4 dB while drawing 6.5 mW from a 1.5 V supply. Detailed design process and simulation results are presented in this paper
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; circuit simulation; integrated circuit design; integrated circuit noise; 0.35 micron; 1.4 dB; 1.5 V; 1.9 GHz; 21 dB; 6.5 mW; CMOS low noise amplifier; UHF ICs; UHF amplifiers; design process; simulation results; 1f noise; Circuit noise; Impedance matching; Low-frequency noise; Low-noise amplifiers; MOS devices; Noise figure; Noise generators; Noise measurement; Semiconductor device modeling;
Conference_Titel :
Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-5471-0
DOI :
10.1109/ISCAS.1999.780625
