DocumentCode
342434
Title
A general subthreshold MOS translinear theorem
Author
Serrano-Gotarredona, Teresa ; Linares-Barranco, Bernaco ; Andreou, Andreas G.
Author_Institution
Nat. Microelectron. Center (CNM), Sevilla, Spain
Volume
2
fYear
1999
fDate
36342
Firstpage
302
Abstract
This paper outlines the conditions under which the translinear principle can be fully exploited for MOS transistors operating in subthreshold. Due to the exponential nature of subthreshold MOS transistors the translinear principle applies immediately as long as the source-to-bulk voltages are made equal to zero (or constant). This paper addresses the conditions under which subthreshold MOS transistors still satisfy a translinear principle but without imposing this constraint. It is found that the translinear principle results in a more general formulation than the original for BJTs since now multiple translinear loops can be involved. The constraint of even number of transistors is no longer necessary
Keywords
MOSFET circuits; multiterminal networks; nonlinear network analysis; multiple translinear loops; multiterminal networks; nonlinear networks; source-to-bulk voltages; subthreshold MOS translinear theorem; Bipolar transistor circuits; Bipolar transistors; Circuit synthesis; Circuit theory; Diodes; Equations; MOSFETs; Microelectronics; Nonlinear circuits; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on
Conference_Location
Orlando, FL
Print_ISBN
0-7803-5471-0
Type
conf
DOI
10.1109/ISCAS.1999.780717
Filename
780717
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