• DocumentCode
    342434
  • Title

    A general subthreshold MOS translinear theorem

  • Author

    Serrano-Gotarredona, Teresa ; Linares-Barranco, Bernaco ; Andreou, Andreas G.

  • Author_Institution
    Nat. Microelectron. Center (CNM), Sevilla, Spain
  • Volume
    2
  • fYear
    1999
  • fDate
    36342
  • Firstpage
    302
  • Abstract
    This paper outlines the conditions under which the translinear principle can be fully exploited for MOS transistors operating in subthreshold. Due to the exponential nature of subthreshold MOS transistors the translinear principle applies immediately as long as the source-to-bulk voltages are made equal to zero (or constant). This paper addresses the conditions under which subthreshold MOS transistors still satisfy a translinear principle but without imposing this constraint. It is found that the translinear principle results in a more general formulation than the original for BJTs since now multiple translinear loops can be involved. The constraint of even number of transistors is no longer necessary
  • Keywords
    MOSFET circuits; multiterminal networks; nonlinear network analysis; multiple translinear loops; multiterminal networks; nonlinear networks; source-to-bulk voltages; subthreshold MOS translinear theorem; Bipolar transistor circuits; Bipolar transistors; Circuit synthesis; Circuit theory; Diodes; Equations; MOSFETs; Microelectronics; Nonlinear circuits; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on
  • Conference_Location
    Orlando, FL
  • Print_ISBN
    0-7803-5471-0
  • Type

    conf

  • DOI
    10.1109/ISCAS.1999.780717
  • Filename
    780717