DocumentCode :
342434
Title :
A general subthreshold MOS translinear theorem
Author :
Serrano-Gotarredona, Teresa ; Linares-Barranco, Bernaco ; Andreou, Andreas G.
Author_Institution :
Nat. Microelectron. Center (CNM), Sevilla, Spain
Volume :
2
fYear :
1999
fDate :
36342
Firstpage :
302
Abstract :
This paper outlines the conditions under which the translinear principle can be fully exploited for MOS transistors operating in subthreshold. Due to the exponential nature of subthreshold MOS transistors the translinear principle applies immediately as long as the source-to-bulk voltages are made equal to zero (or constant). This paper addresses the conditions under which subthreshold MOS transistors still satisfy a translinear principle but without imposing this constraint. It is found that the translinear principle results in a more general formulation than the original for BJTs since now multiple translinear loops can be involved. The constraint of even number of transistors is no longer necessary
Keywords :
MOSFET circuits; multiterminal networks; nonlinear network analysis; multiple translinear loops; multiterminal networks; nonlinear networks; source-to-bulk voltages; subthreshold MOS translinear theorem; Bipolar transistor circuits; Bipolar transistors; Circuit synthesis; Circuit theory; Diodes; Equations; MOSFETs; Microelectronics; Nonlinear circuits; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-5471-0
Type :
conf
DOI :
10.1109/ISCAS.1999.780717
Filename :
780717
Link To Document :
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