DocumentCode
3424352
Title
Influence of catalyst drop properties on GaAs nanowhisker growth
Author
Knyazeva, Maria V. ; Shwartz, Nataliya L.
Author_Institution
Novosibirsk State Tech. Univ., Novosibirsk, Russia
fYear
2012
fDate
2-6 July 2012
Firstpage
20
Lastpage
22
Abstract
GaAs nanowhisker growth according to vapor-liquid-solid mechanism was analyzed using Monte Carlo model. Nanowhisker growth on GaAs(111)B surface activated by golden drops was realized. In the model system some experimentally observed effects were found: change of catalyst drop shape and decrease of NW diameter during growth, Au atom migration from the drop to GaAs surface, Au dissolution in growing whisker.
Keywords
III-V semiconductors; Monte Carlo methods; catalysts; dissolving; gallium arsenide; nanofabrication; nanostructured materials; semiconductor growth; whiskers (crystal); GaAs; GaAs(111)B surface; Monte Carlo model; atom migration; catalyst drop properties; dissolution; golden drops; nanowhisker growth; vapor-liquid-solid mechanism; Atomic layer deposition; Gallium; Gallium arsenide; Gold; Monte Carlo methods; Shape; Surface treatment; GaAs; Monte Carlo; nanowhisker; simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro/Nanotechnologies and Electron Devices (EDM), 2012 IEEE 13th International Conference and Seminar of Young Specialists on
Conference_Location
Erlagol, Altai
Print_ISBN
978-1-4673-2517-2
Type
conf
DOI
10.1109/EDM.2012.6310226
Filename
6310226
Link To Document