Title :
Performance/power tradeoffs in high-speed GaAs ADCs
Author :
Kaess, F. ; Kanan, R. ; Hochet, B. ; Declercq, M.
Author_Institution :
Electron. Lab., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
Abstract :
While designing very high-speed analog-to-digital converters, the power consumption is usually neglected in the search for performance. However, it should be taken into account, for commercial reasons as well as for technical ones (cooling issues). The converter architecture is of a critical importance for optimizing the performance/power tradeoff of a converter. The aim of this paper is to decide, for a given technology, in this case a GaAs MESFET technology, which architecture exhibits the best trade-off between power consumption and performances
Keywords :
III-V semiconductors; MESFET integrated circuits; analogue-digital conversion; cooling; gallium arsenide; high-speed integrated circuits; integrated circuit packaging; GaAs; MESFET technology; converter architecture; cooling issues; high-speed ADCs; performance/power tradeoff; power consumption; Analog-digital conversion; CMOS technology; Clocks; Energy consumption; FETs; Gallium arsenide; HEMTs; Interpolation; MESFETs; Voltage;
Conference_Titel :
Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-5471-0
DOI :
10.1109/ISCAS.1999.780723
