DocumentCode
3424434
Title
High-temperature CNFET charactristics
Author
Amiri, Samaneh Soleimani ; Afzali-Kusha, Ali ; Forouzandeh, Behjat
Author_Institution
Sch. of Electr. & Comput. Eng., Univ. of Tehran, Tehran
fYear
2009
fDate
26-29 April 2009
Firstpage
1
Lastpage
4
Abstract
In this paper, we investigate the performance characteristic of CNFET inverter based on a new compact model. We consider temperature variation effects on the CNFET circuit performance implemented in a 32-nm technology. The results show in contrast to MOSFET sub-threshold current reduces in CNFET with temperature. So by using CNFET in high temperature applications we can obtain high speed and low leakage.
Keywords
carbon nanotubes; field effect transistors; invertors; MOSFET; carbon nanotube field effect transistors; high-temperature CNFET; inverter; size 32 nm; Carbon nanotubes; Circuit optimization; FETs; Fluctuations; High performance computing; Inverters; MOSFET circuits; Photonic band gap; Semiconductor device modeling; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermal, Mechanical and Multi-Physics simulation and Experiments in Microelectronics and Microsystems, 2009. EuroSimE 2009. 10th International Conference on
Conference_Location
Delft
Print_ISBN
978-1-4244-4160-0
Electronic_ISBN
978-1-4244-4161-7
Type
conf
DOI
10.1109/ESIME.2009.4938483
Filename
4938483
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