Non-ideal quantization noise shaping in switched-current bandpass ΣΔ modulators

Author

de la Rosa, Jos M. ; Perez-Verdu, Belen ; del Rio, Rocio ; Rodriguez-Vazquez, Angel

Author_Institution

Inst. de Microelectron., CSIC, Sevilla

Volume

2

fYear

1999

fDate

36342

Firstpage

476

Abstract

This paper presents a systematic analysis of the major switched-current (SI) errors and their influence on the quantization noise shaping of SI bandpass ΣΔ modulators (BPΣΔMs). Closed form equations are provided for the degradation of the signal-to-noise ratio and for the change of the notch frequency position in order to facilitate the design of this class of modulators. All these results have been validated by nonideal time-domain behavioral simulations

Keywords

circuit simulation; integrated circuit noise; quantisation (signal); sigma-delta modulation; switched current circuits; time-domain analysis; closed form equations; nonideal quantization noise shaping; nonideal time-domain behavioral simulations; notch frequency position; signal-to-noise ratio; switched-current bandpass ΣΔ modulators; systematic analysis; CMOS technology; Degradation; Delta modulation; Equations; Frequency; Noise shaping; Quantization; Switching circuits; Telecommunication switching; Time domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on

Conference_Location

Orlando, FL

Print_ISBN

0-7803-5471-0

Type

conf

DOI

10.1109/ISCAS.1999.780777

Filename

780777