Title :
Design of high speed bipolar Si/SiGe ICs for optical wide band communications
Author :
Baumheinrich, Thorsten ; Langmann, Ulrich
Author_Institution :
Lehrstuhl fur Elektronische Bauelemente, Ruhr-Univ., Bochum, Germany
Abstract :
Si/SiGe bipolar technology has turned out to be a powerful basis for the design of high speed ICs for 40 Gbit/s ETDM communications systems. In this paper, we discuss design issues set up by system demands and existent performance limitations in terms of power consumption, speed and reliability. We present appropriate optimization measures such as active pull down techniques that serve to improve the speed and power consumption of binary digital high-speed ICs. Further advances can be achieved by applying low-level line codes. In particular, 4-level digital signal processing, where 40 Gbit/s are transmitted at 20 Gbaud/s, is very advantageous since it enables new ways for improving circuit and system performance. We will present issues, demands, design approaches and benefits of using 4-level techniques in coding and decoding-circuits for the binary-to-4-level conversion in ETDM optical communications systems. The discussion of these measures is illustrated by extensive circuit simulations based on an industrial Si/SiGe bipolar technology
Keywords :
bipolar digital integrated circuits; broadband networks; circuit simulation; high-speed integrated circuits; integrated circuit design; optical communication equipment; 4-level techniques; ETDM optical communication; Si-SiGe; binary-to-4-level conversion; circuit simulation; coding; decoding; digital signal processing; high speed IC; high speed bipolar Si/SiGe IC; low-level line codes; optical wide band communications; optimization; power consumption; reliability; speed; Energy consumption; Germanium silicon alloys; High speed optical techniques; Optical design; Optical signal processing; Power measurement; Power system reliability; Silicon germanium; Velocity measurement; Wideband;
Conference_Titel :
Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-5471-0
DOI :
10.1109/ISCAS.1999.780787