Title :
Ultra high frequency integrated circuits using transferred substrate heterojunction bipolar transistors
Author :
Rodwell, Mark ; Lee, Q. ; Mensa, D. ; Guthrie, J. ; Betser, Y. ; Martin, S.C. ; Smith, R.P. ; Jaganathan, S. ; Mathew, T. ; Krishnan, P. ; Serhan, C. ; Long, S.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
Using substrate transfer processes, we have fabricated heterojunction bipolar transistors with submicron emitter-base and collector-base junctions, minimizing RC parasitics and increasing fmax to 820 GHz, the highest reported for any transistor. The process also provides a microstrip wiring environment on low-εr dielectric substrate. Demonstrated small-scale ICs in the process include lumped and distributed amplifiers with bandwidths to 85 GHz, 48 GHz static frequency dividers, and 50 GHz AGC/limiting amplifiers
Keywords :
UHF integrated circuits; bipolar digital integrated circuits; distributed amplifiers; frequency dividers; heterojunction bipolar transistors; lumped parameter networks; microwave limiters; 48 GHz; 50 GHz; 820 GHz; 85 GHz; AGC/limiting amplifiers; RC parasitics; collector-base junctions; dielectric substrate; distributed amplifiers; heterojunction bipolar transistors; lumped amplifiers; microstrip wiring; small-scale ICs; static frequency dividers; submicron emitter-base; ultra high frequency integrated circuits; Bandwidth; Capacitance; Clocks; Dielectric substrates; Frequency conversion; Frequency synthesizers; Heterojunction bipolar transistors; Integrated circuit interconnections; UHF integrated circuits; Wiring;
Conference_Titel :
Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-5471-0
DOI :
10.1109/ISCAS.1999.780789
