Title :
InP HBT circuits for high speed ETDM systems
Author :
Andre, P. ; Kauffmann, N. ; Desrousseaux, P. ; Godin, J. ; Konczykowska, A.
Author_Institution :
Groupement d´´Interet Econ., CNET, Bagneux, France
Abstract :
The circuits for ETDM transmission systems and in particular the emitting side realized in InP DHBT technology are presented in this paper. Device modeling, design, packaging and measurement of high speed circuits is discussed. 50 Gb/s 2:1 MUX and 35 Gb/s MUX-driver illustrate various aspects of presented methodology
Keywords :
III-V semiconductors; data communication equipment; indium compounds; integrated circuit design; integrated circuit packaging; time division multiplexing; very high speed integrated circuits; 35 Gbit/s; 50 Gbit/s; InP; InP HBT circuits; MUX-driver; design; high speed ETDM; high speed circuits; impedance matching; layout; modeling; packaging; Circuit simulation; DH-HEMTs; Heterojunction bipolar transistors; High speed optical techniques; Indium phosphide; Packaging; Predictive models; Solid modeling; Time division multiplexing; Very high speed integrated circuits;
Conference_Titel :
Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-5471-0
DOI :
10.1109/ISCAS.1999.780791
