DocumentCode :
3424865
Title :
Silicon based nano lead for single cell recording
Author :
Shuzo, M. ; Arai, H. ; Kanzaki, R. ; Shimoyama, I.
Author_Institution :
Graduate Sch. of Inf. Sci. & Technol., Tokyo Univ., Japan
fYear :
2005
fDate :
30 Jan.-3 Feb. 2005
Firstpage :
766
Lastpage :
769
Abstract :
In this paper "nano lead" is defined as a submicron scale electrode for recording a neural activity from a single cell. The nano lead was fabricated with the technique of EB direct writing, DRIE, and FIB. The tiny recording site of the nano lead made very high electrode impedance at the low frequency, 100 MΩ at 100 Hz and 500 MΩ at DC. It caused the base line of the nerve potential unstable, but the IPSP signals of Aplysia were measured clearly.
Keywords :
biomolecular electronics; lead; microelectrodes; nanotechnology; neural nets; recorders; silicon; 100 Hz; Aplysia; DC; DRIE; EB direct writing; FIB; IPSP signal; Pb; Si; electrode impedance; nerve potential base line; neural activity; recording site; silicon based nano lead; single cell recording; submicron scale electrode; Electrodes; Etching; Fabrication; Glass; Lead; Neurons; Resists; Sea measurements; Silicon; Writing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2005. MEMS 2005. 18th IEEE International Conference on
ISSN :
1084-6999
Print_ISBN :
0-7803-8732-5
Type :
conf
DOI :
10.1109/MEMSYS.2005.1454042
Filename :
1454042
Link To Document :
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