High Q backside micromachined CMOS inductors

Author

Ozgur, Mehmet ; Zaghloul, Mona E. ; Gaitan, Michael

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., George Washington Univ., Washington, DC, USA

Volume

2

fYear

1999

fDate

36342

Firstpage

577

Abstract

Spiral inductors that are fabricated through a CMOS process, are micromachined by using a new post-processing procedure. In this new technique, the inductors are supported mechanically prior to etching with a low-loss host substrate, and the silicon substrate is selectively etched from the backside. A scalable physical model for such inductors is developed. The results from the model are in good agreement with the measurements. Significant performance improvements are achieved without compromising the mechanical robustness of the fully integrated inductors. By using a 1.2 μm CMOS technology, a quality factor of 10.5 is measured at 4.6 GHz for 8.9 nH inductor

Keywords

CMOS integrated circuits; Q-factor; UHF integrated circuits; equivalent circuits; etching; field effect MMIC; inductors; integrated circuit modelling; micromachining; silicon; 1.2 micron; 4.6 GHz; Si; Si substrate; backside micromachined CMOS inductors; high-Q CMOS inductors; low-loss host substrate; mechanical support; post-processing procedure; quality factor; scalable physical model; selective etching; spiral inductors; CMOS process; CMOS technology; Etching; Inductors; Micromachining; NIST; Robustness; Semiconductor device modeling; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on

Conference_Location

Orlando, FL

Print_ISBN

0-7803-5471-0

Type

conf

DOI

10.1109/ISCAS.1999.780821

Filename

780821