A fourth-order CMOS bandpass amplifier with high linearity and high image rejection for GSM receivers

Author

Leung, David L C ; Luong, Howard C.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, Hong Kong

Volume

2

fYear

1999

fDate

36342

Firstpage

589

Abstract

A fourth-order CMOS bandpass amplifier with improved linearity and image rejection using standard CMOS 0.8 μm technology is presented. Sources of nonlinearities in the bandpass amplifier are discussed, and linearized tuning circuits are designed. With a quality factor of 38, the overall voltage gain and the image rejection are 28 dB and 36.5 dB respectively. Also, the corresponding noise figure is 5.8 dB. Simulated with the improved tuning circuitries, the IIP₃ is -18 dBm and the P_{o-1 dB} are -18 dBm and -31.5 dBm respectively. The total current dissipation is 32 mA

Keywords

CMOS analogue integrated circuits; Q-factor; UHF amplifiers; UHF integrated circuits; cellular radio; circuit tuning; integrated circuit design; radio receivers; 0.8 micron; 28 dB; 32 mA; 5.8 dB; GSM receivers; fourth-order CMOS bandpass amplifier; image rejection; linearity; linearized tuning circuits; nonlinearity sources; overall voltage gain; quality factor; total current dissipation; Band pass filters; CMOS technology; Circuit optimization; Digital signal processing chips; GSM; Linearity; Polynomials; Q factor; Radio frequency; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on

Conference_Location

Orlando, FL

Print_ISBN

0-7803-5471-0

Type

conf

DOI

10.1109/ISCAS.1999.780827

Filename

780827