Title :
A fourth-order CMOS bandpass amplifier with high linearity and high image rejection for GSM receivers
Author :
Leung, David L C ; Luong, Howard C.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, Hong Kong
Abstract :
A fourth-order CMOS bandpass amplifier with improved linearity and image rejection using standard CMOS 0.8 μm technology is presented. Sources of nonlinearities in the bandpass amplifier are discussed, and linearized tuning circuits are designed. With a quality factor of 38, the overall voltage gain and the image rejection are 28 dB and 36.5 dB respectively. Also, the corresponding noise figure is 5.8 dB. Simulated with the improved tuning circuitries, the IIP3 is -18 dBm and the Po-1 dB are -18 dBm and -31.5 dBm respectively. The total current dissipation is 32 mA
Keywords :
CMOS analogue integrated circuits; Q-factor; UHF amplifiers; UHF integrated circuits; cellular radio; circuit tuning; integrated circuit design; radio receivers; 0.8 micron; 28 dB; 32 mA; 5.8 dB; GSM receivers; fourth-order CMOS bandpass amplifier; image rejection; linearity; linearized tuning circuits; nonlinearity sources; overall voltage gain; quality factor; total current dissipation; Band pass filters; CMOS technology; Circuit optimization; Digital signal processing chips; GSM; Linearity; Polynomials; Q factor; Radio frequency; Voltage;
Conference_Titel :
Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-5471-0
DOI :
10.1109/ISCAS.1999.780827
