Title :
Electrical properties of Pb(Zr,Ti)O3 thin films on Ir and IrO2 electrodes by MOCVD
Author :
Shimizu, Masaru ; Okino, Hirotake ; Fujisawa, Hironori ; Shiosaki, Tadashi
Author_Institution :
Dept. of Electron., Himeji Inst. of Technol., Hyogo, Japan
Abstract :
The electrical properties of PZT thin films grown by MOCVD on Pt, Ir, IrO2 and Ir/IrO2 bottom electrodes, and the effects of various top electrode materials on the electrical properties of these PZT films, were investigated. Regardless of the top electrode materials, PZT films prepared on Ir, IrO2 and Ir/IrO2 showed a smaller dielectric constant and Pr, and showed larger Ec than those of PZT films on both Pt top and bottom electrode. Ir/IrO2/PZT/IrO2/Ir/SiO2/Si capacitors showed no fatigue up to a switching cycle of 1011 and showed a leakage current density of 10-7 A/cm2 at 3 V
Keywords :
chemical vapour deposition; ferroelectric capacitors; ferroelectric thin films; lead compounds; piezoceramics; Ir; Ir electrode; IrO2; IrO2 electrode; MOCVD; PZT; Pb(Zr,Ti)O3 thin film; PbZrO3TiO3; capacitor; coercive field; dielectric constant; electrical properties; fatigue; leakage current density; remanent polarization; switching cycle; Argon; Dielectric materials; Electrodes; Fatigue; Ferroelectric materials; MOCVD; Sputtering; Substrates; Temperature; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on
Conference_Location :
East Brunswick, NJ
Print_ISBN :
0-7803-3355-1
DOI :
10.1109/ISAF.1996.602791
