Title :
Low power, wide range threshold acceleration sensing system
Author :
Selvakumar, A. ; Yazdi, N. ; Najafi, K.
Author_Institution :
Center for Integrated Sensors & Circuits, Michigan Univ., Ann Arbor, MI, USA
Abstract :
A complete threshold acceleration detection system is presented in this paper, possessing (i) an array of threshold accelerometers, and (ii) a low power interface circuit. The sensors were designed and fabricated using a modified bulk silicon dissolved wafer process. This process offers a wide latitude in sensor threshold levels, as demonstrated in the fabrication of devices, with levels of 1.5 g to 1000 g, bandwidth of 45 Hz to 40 kHz, with mass sizes ranging from 15 programs to 0.7 μgrams, and low-resistance gold-gold contacts for the switch. The interface circuit is fabricated in-house, using a standard 3 μm, p-well CMOS process and connected to the sensor chip, in a multi-chip module. Additionally, the system employs redundancy, to improve detection accuracy and fault tolerance, which is crucial in many applications. The system also supports communication with a standard microcontroller bus, in a smart sensor environment
Keywords :
CMOS integrated circuits; accelerometers; elemental semiconductors; integrated circuit technology; microsensors; multichip modules; redundancy; reliability; semiconductor switches; semiconductor technology; silicon; 15 pg to 0.7 mug; 3 mum; 45 Hz to 40 kHz; Au; Si; Si modified bulk dissolved wafer process; detection accuracy; fabrication; fault tolerance; gold-gold contacts; interface circuit; microsensor; multi-chip module; p-well CMOS process; redundancy; smart sensor environment; switch; wide range threshold acceleration; Acceleration; Accelerometers; Bandwidth; Circuits; Communication switching; Contacts; Fabrication; Intelligent sensors; Silicon; Switches;
Conference_Titel :
Micro Electro Mechanical Systems, 1996, MEMS '96, Proceedings. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems. IEEE, The Ninth Annual International Workshop on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-2985-6
DOI :
10.1109/MEMSYS.1996.493851