An exact analysis for bimolecular band-to-band recombination lifetime under high injection conditions

Author

Pieper, Ron J. ; Weatherford, Todd

Author_Institution

Dept. of Electr. & Comput. Eng., Naval Postgraduate Sch., Monterey, CA, USA

fYear

1997

fDate

9-11 Mar 1997

Firstpage

415

Lastpage

419

Abstract

The bimolecular model for predicting transient band-to-band recombination lifetime in semiconductors is nonlinear in the excess carrier concentrations. Usually a low-injection assumption is made which linearizes the problem and yields for direct recombination the well known rule-of-thumb that the excess carrier lifetime should depend inversely on the doping concentration. For applications in which the low-injection assumption is invalid a more precise analysis which produces an injection dependent lifetime is presented

Keywords

carrier density; carrier lifetime; electron-hole recombination; minority carriers; semiconductor device models; semiconductors; transient analysis; bimolecular band-to-band recombination lifetime; bimolecular model; doping concentration; excess carrier lifetime; high injection conditions; injection dependent lifetime; minority carrier lifetime; semiconductor devices; semiconductors; transient band-to-band recombination lifetime; Charge carrier lifetime; Charge carrier processes; Light emitting diodes; Nonlinear optics; Predictive models; Radiative recombination; Semiconductor device doping; Semiconductor devices; Semiconductor process modeling; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

System Theory, 1997., Proceedings of the Twenty-Ninth Southeastern Symposium on

Conference_Location

Cookeville, TN

ISSN

0094-2898

Print_ISBN

0-8186-7873-9

Type

conf

DOI

10.1109/SSST.1997.581693

Filename

581693