An exact analysis for bimolecular band-to-band recombination lifetime under high injection conditions

The bimolecular model for predicting transient band-to-band recombination lifetime in semiconductors is nonlinear in the excess carrier concentrations. Usually a low-injection assumption is made which linearizes the problem and yields for direct recombination the well known rule-of-thumb that the excess carrier lifetime should depend inversely on the doping concentration. For applications in which the low-injection assumption is invalid a more precise analysis which produces an injection dependent lifetime is presented