Title :
Ti2N barrier layers for multi-layer interconnection
Author :
Hara, Tohru ; Yokoshi, Minoru ; Iwase, N. ; Yasumoto, Taka-aki
Author_Institution :
Dept. of Electr. Eng., Hosei Univ., Tokyo, Japan
Abstract :
An adhesion strength of 4.4×107 Pa is attained in Ti2N/TiAl3 inter-layer formed by reaction at the Ti/AlN for AlN substrate. This strength is much greater than of 2.6×107 Pa in Ti adhesion layer conventionally used. Therefore, this layer can be used instead of Ti adhesion layer. Since this layer also showed excellent barrier performance for Au, Ni and Al conductive layers, the Ti2N layer can also be used in place of Pt barrier layer in multi-layer interconnection. These results suggests that triple layer interconnection, such as Au/Pt/Ti/AlN and Ni/Pt/Ti/AlN, can be replaced by a double layer interconnection of Au/Ti 2N/AlN employing Ti2N as adhesion and barrier layers. This double layer interconnection is useful for the manufacture of ceramic package and circuit boards
Keywords :
adhesion; fine-pitch technology; integrated circuit interconnections; integrated circuit packaging; large scale integration; titanium compounds; wiring; AlN; Au-Pt-Ti-AlN; LSI; Ni-Pt-Ti-AlN; Ti2N; adhesion strength; barrier performance; ceramic package; circuit boards; fine pitch lines; multi-layer interconnection; package wiring; Adhesives; Artificial intelligence; Ceramics; Gold; Integrated circuit interconnections; Integrated circuit packaging; Large scale integration; Manufacturing; Substrates; Thermal conductivity;
Conference_Titel :
Electronic Manufacturing Technology Symposium, 1995, Proceedings of 1995 Japan International, 18th IEEE/CPMT International
Conference_Location :
Omiya
Print_ISBN :
0-7803-3622-4
DOI :
10.1109/IEMT.1995.541025
