Title :
Evidence for nonequilibrium base transport in Si and SiGe bipolar transistors at cryogenic temperatures
Author :
Richey, David M. ; Joseph, Alvin J. ; Cressler, John D. ; Jaeger, Richard C.
Author_Institution :
Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA
Abstract :
Observed discrepancies between measured collector current and transconductance with that predicted by standard drift-diffusion theory at cryogenic temperatures are explained by accounting for nonequilibrium carrier transport across the neutral base region in advanced Si and SiGe bipolar devices
Keywords :
Ge-Si alloys; bipolar transistors; cryogenic electronics; elemental semiconductors; semiconductor device models; semiconductor materials; silicon; Si; SiGe; bipolar transistors; collector current; cryogenic temperatures; drift-diffusion theory; neutral base region; nonequilibrium base transport; transconductance; Bipolar transistors; Cryogenics; Electrons; Germanium silicon alloys; Photonic band gap; Silicon germanium; Temperature dependence; Temperature sensors; Transconductance; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-2778-0
DOI :
10.1109/BIPOL.1995.493860
