DocumentCode
3425404
Title
Evidence for nonequilibrium base transport in Si and SiGe bipolar transistors at cryogenic temperatures
Author
Richey, David M. ; Joseph, Alvin J. ; Cressler, John D. ; Jaeger, Richard C.
Author_Institution
Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA
fYear
1995
fDate
2-3 Oct 1995
Firstpage
35
Lastpage
38
Abstract
Observed discrepancies between measured collector current and transconductance with that predicted by standard drift-diffusion theory at cryogenic temperatures are explained by accounting for nonequilibrium carrier transport across the neutral base region in advanced Si and SiGe bipolar devices
Keywords
Ge-Si alloys; bipolar transistors; cryogenic electronics; elemental semiconductors; semiconductor device models; semiconductor materials; silicon; Si; SiGe; bipolar transistors; collector current; cryogenic temperatures; drift-diffusion theory; neutral base region; nonequilibrium base transport; transconductance; Bipolar transistors; Cryogenics; Electrons; Germanium silicon alloys; Photonic band gap; Silicon germanium; Temperature dependence; Temperature sensors; Transconductance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-2778-0
Type
conf
DOI
10.1109/BIPOL.1995.493860
Filename
493860
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