Improved collector transit time with ballistic pipi-structure in the npn-AlGaAs/GaAs HBT

Author

Kim, D.M. ; Song, S.H.

Author_Institution

Dept. of Electron. Eng., Kookmin Univ., Seoul, South Korea

fYear

1995

fDate

2-3 Oct 1995

Firstpage

39

Lastpage

42

Abstract

In this paper, we propose an improved npn-HBT with pipi-doping collector structure maximally utilizing ballistic transport property with modified electric field distribution in the collector-base space charge region. With pipi-HBT, we obtained significant reduction of τ _scr compared with those of previously reported conventional and ballistic collector structure HBTs

Keywords

III-V semiconductors; aluminium compounds; doping profiles; gallium arsenide; heavily doped semiconductors; heterojunction bipolar transistors; semiconductor device models; semiconductor doping; space-charge-limited conduction; AlGaAs-GaAs; ballistic pipi-structure; ballistic transport property; collector transit time; collector-base space charge region; electric field distribution; npn-HBT; pipi-doping collector structure; Ballistic transport; Cutoff frequency; Doping; Electron emission; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Microwave integrated circuits; Millimeter wave technology; Space charge;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-2778-0

Type

conf

DOI

10.1109/BIPOL.1995.493861

Filename

493861