DocumentCode
3426033
Title
Current sensing schemes for use in BiCMOS integrated circuits
Author
Corsi, Marco
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
fYear
1995
fDate
2-3 Oct 1995
Firstpage
55
Lastpage
57
Abstract
In integrated circuits it is often required to devise some scheme to measure or limit current in a power transistor. By using the properties of bipolar transistors several simple circuits can be manufactured that enable accurate sensing of transistor current without the usual bandwidth limitations
Keywords
BiCMOS integrated circuits; current comparators; current limiters; power integrated circuits; Al; Al resistor; BiCMOS integrated circuits; current limiting; current sensing schemes; power IC; power transistor; transistor current sensing; Aluminum; BiCMOS integrated circuits; Coupling circuits; Manufacturing processes; Parasitic capacitance; Propagation delay; Rectifiers; Resistors; Temperature; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-2778-0
Type
conf
DOI
10.1109/BIPOL.1995.493865
Filename
493865
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