Title :
Hot carrier induced degradation of CMOS current mirrors and current sources
Author :
Thewes, R. ; Goser, K.F. ; Weber, W.
Author_Institution :
Siemens Corp., Munich, Germany
Abstract :
A model is derived and verified experimentally that describes the hot-carrier degradation of simple and cascaded CMOS current mirrors and current sources on the basis of single device parameters. In this way, a highly practical method is achieved that allows one to correlate circuit and device parameter degradation of a whole class of analog sub-circuits by analytical means.
Keywords :
CMOS analogue integrated circuits; cascade networks; constant current sources; hot carriers; integrated circuit modelling; integrated circuit reliability; CMOS current mirrors; CMOS current sources; analog sub-circuits; hot carrier induced degradation; model; single device parameters; CMOS analog integrated circuits; CMOS digital integrated circuits; CMOS logic circuits; Degradation; Equivalent circuits; Hot carriers; Mirrors; Semiconductor device modeling; Stress; Voltage;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554121
