Hot carrier induced degradation of CMOS current mirrors and current sources

Author

Thewes, R. ; Goser, K.F. ; Weber, W.

Author_Institution

Siemens Corp., Munich, Germany

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

885

Lastpage

888

Abstract

A model is derived and verified experimentally that describes the hot-carrier degradation of simple and cascaded CMOS current mirrors and current sources on the basis of single device parameters. In this way, a highly practical method is achieved that allows one to correlate circuit and device parameter degradation of a whole class of analog sub-circuits by analytical means.

Keywords

CMOS analogue integrated circuits; cascade networks; constant current sources; hot carriers; integrated circuit modelling; integrated circuit reliability; CMOS current mirrors; CMOS current sources; analog sub-circuits; hot carrier induced degradation; model; single device parameters; CMOS analog integrated circuits; CMOS digital integrated circuits; CMOS logic circuits; Degradation; Equivalent circuits; Hot carriers; Mirrors; Semiconductor device modeling; Stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.554121

Filename

554121

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3426111