DocumentCode :
3426286
Title :
Nanometer bulk-driven applications MOSFET model analysis
Author :
Shaoxi, Wang
Author_Institution :
Coll. of software & Microelectron., Northwestern Polytech. Univ., Xi´´an, China
Volume :
4
fYear :
2010
fDate :
25-27 June 2010
Abstract :
Bulk-driven MOSFET technique meets the low-voltage and low-power requirements demanded in the modern analog circuit design. Due to nanometer technologies and critical short-channel effects, choosing a suitable MOSFET model for circuit design becomes increasingly important. However, the conventional MOSFET models normally set up for the typical gate-driven applications may not perform correctly and accurately for the bulk-driven applications in the advanced technologies. In this paper, three most widely used MOSFET models, including BSIM, EKV, and PSP, have been extracted for the modern technologies and used in the simulation of bulk-driven applications. Measurement data of fabricated devices are compared with simulation results from distinct models. Several critical MOSFET parameters have been chosen to compare and analyze MOSFET characteristics. The experimental results demonstrate the advantages of the bulk-driven technique compared with the gate-driven scheme. Finally, the performance of distinct MOSFET models is summarized in order to provide analog circuit designers with practical directives.
Keywords :
MOS analogue integrated circuits; MOSFET; integrated circuit design; integrated circuit modelling; low-power electronics; nanoelectronics; semiconductor device models; BSIM model; EKV model; MOSFET model analysis; PSP model; analog circuit design; critical short-channel effects; gate-driven scheme; low-power requirements; low-voltage requirements; nanometer bulk-driven applications; Analog circuits; Analog computers; Circuit simulation; Circuit synthesis; Low voltage; MOS devices; MOSFET circuits; Power MOSFET; Power supplies; Threshold voltage; MOSFET; bulk-driven; model; nanometer;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer Design and Applications (ICCDA), 2010 International Conference on
Conference_Location :
Qinhuangdao
Print_ISBN :
978-1-4244-7164-5
Electronic_ISBN :
978-1-4244-7164-5
Type :
conf
DOI :
10.1109/ICCDA.2010.5541217
Filename :
5541217
Link To Document :
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