DocumentCode :
3426691
Title :
Efficient parameter extraction for the MEXTRAM model
Author :
Kloosterman, W.J. ; Geelen, J.A.M. ; Klaassen, D.B.M.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
fYear :
1995
fDate :
2-3 Oct 1995
Firstpage :
70
Lastpage :
73
Abstract :
A very fast, robust and accurate parameter extraction method for bipolar compact models has been developed. Using a combination of simplified expressions and selected measurements the iterative solution of the full model equations (e.g. using a circuit simulator) is avoided. The method is applied to the bipolar compact model MEXTRAM
Keywords :
bipolar transistors; semiconductor device models; MEXTRAM model; bipolar compact models; iterative solution; parameter extraction; Central Processing Unit; Circuit simulation; Data mining; Equations; Guidelines; Laboratories; Parameter extraction; Proximity effect; Robustness; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-2778-0
Type :
conf
DOI :
10.1109/BIPOL.1995.493869
Filename :
493869
Link To Document :
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