DocumentCode :
3426699
Title :
CMOS drivable electrostatic microactuator with large deflection
Author :
Yasuda, Takashi ; Shimoyama, Isao ; Miura, Hirofumi
Author_Institution :
Tokyo Univ., Japan
fYear :
1997
fDate :
26-30 Jan 1997
Firstpage :
90
Lastpage :
95
Abstract :
A new type of low voltage (11.8 V), large deflection (245 μm), electrostatic microactuator has been developed. Its performance was achieved by using several cantilevers connected in series and bending continuously. All of the cantilevers require the same low voltage to bend as one single cantilever does. Each cantilever has a straight beam section and a curved beam section. Experiments show that the length of both beam sections is important in order to decrease the driving voltage. The actuator has a large hysteresis and has a critical voltage which is required to drive it. This required voltage is low enough to allow a CMOS device to drive the actuator. Moreover, a small solar cell panel was able to supply the actuator with the necessary power to drive it
Keywords :
CMOS integrated circuits; driver circuits; electrostatic devices; microactuators; 11.8 V; 245 mum; CMOS drive; Si; critical voltage; electrostatic microactuator; fabrication; hysteresis; solar cell panel; Actuators; Chromium; Conductive films; Electrodes; Electrostatics; Low voltage; Magnetic hysteresis; Microactuators; Silicon; Structural beams;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 1997. MEMS '97, Proceedings, IEEE., Tenth Annual International Workshop on
Conference_Location :
Nagoya
ISSN :
1084-6999
Print_ISBN :
0-7803-3744-1
Type :
conf
DOI :
10.1109/MEMSYS.1997.581776
Filename :
581776
Link To Document :
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