CMOS drivable electrostatic microactuator with large deflection

Author

Yasuda, Takashi ; Shimoyama, Isao ; Miura, Hirofumi

Author_Institution

Tokyo Univ., Japan

fYear

1997

fDate

26-30 Jan 1997

Firstpage

90

Lastpage

95

Abstract

A new type of low voltage (11.8 V), large deflection (245 μm), electrostatic microactuator has been developed. Its performance was achieved by using several cantilevers connected in series and bending continuously. All of the cantilevers require the same low voltage to bend as one single cantilever does. Each cantilever has a straight beam section and a curved beam section. Experiments show that the length of both beam sections is important in order to decrease the driving voltage. The actuator has a large hysteresis and has a critical voltage which is required to drive it. This required voltage is low enough to allow a CMOS device to drive the actuator. Moreover, a small solar cell panel was able to supply the actuator with the necessary power to drive it

Keywords

CMOS integrated circuits; driver circuits; electrostatic devices; microactuators; 11.8 V; 245 mum; CMOS drive; Si; critical voltage; electrostatic microactuator; fabrication; hysteresis; solar cell panel; Actuators; Chromium; Conductive films; Electrodes; Electrostatics; Low voltage; Magnetic hysteresis; Microactuators; Silicon; Structural beams;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 1997. MEMS '97, Proceedings, IEEE., Tenth Annual International Workshop on

Conference_Location

Nagoya

ISSN

1084-6999

Print_ISBN

0-7803-3744-1

Type

conf

DOI

10.1109/MEMSYS.1997.581776

Filename

581776