Title :
Extraction of thermal parameters for bipolar circuit simulation
Author :
Zweidinger, D.T. ; Fox, R.M. ; Lee, S.G. ; Jung, T.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
A method is presented for extracting the temperature dependences of bipolar transistor terminal currents, while cancelling effects of self-heating. The method allows extraction at high currents where simple models fail. Results can also be used to extract thermal impedance to model self-heating in suitably modified circuit simulators
Keywords :
bipolar integrated circuits; bipolar transistors; circuit analysis computing; equivalent circuits; integrated circuit modelling; semiconductor device models; thermal analysis; bipolar circuit simulation; circuit simulators; high currents extraction; self-heating effects cancellation; temperature dependences; thermal impedance; thermal parameters extraction; transistor terminal currents; Bipolar transistors; Circuit simulation; Current measurement; Heterojunctions; Impedance; Temperature dependence; Temperature measurement; Thermal conductivity; Thermal resistance; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-2778-0
DOI :
10.1109/BIPOL.1995.493871
