Title :
Self-supported Si fabrication of with STM nano-structure
Author :
Hamanaka, Hitoshi ; On, T. ; Esashi, Masayoshi
Author_Institution :
Fac. of Eng., Tohoku Univ., Sendai, Japan
Abstract :
A self-supported Si nano-structure was fabricated on a Si diaphragm using STM induced anodization and anisotropic Si etching. The width and the thickness of the nano-structure were both approximately 200 nm. For the fabrication of the nano-structure, a very thin double-layered diaphragm which consist of a top Si layer (160 nm) and buried-SiO2 layer (100) was employed. This diaphragm was prepared by etching a SIMOX wafer in TMAH solution from the back side. The top Si layer was protected from the etchant with the buried-SiO2, and used for Si nano-structure. Oxide line pattern was delineated by STM induced anodization of a hydrogen-terminated Si surface. This top Si-layer having anodized-pattern was selectively etched in a hydrazine solution. Anodized oxide patterns act as masks to form Si nano-structures during the etching process. The buried-SiO2 layer was then etched out to release the nano-structure. A supercritical drying method was used for drying the nano-structure after etching the buried-SiO layer in buffered HF. The widths of the anodized-oxide were observed to be approximately 30 nm by a TEM investigation. Since the Si (100) layer is wet etched anisotropically, the width of the structure was enlarged approximately 200 nm
Keywords :
SIMOX; drying; elemental semiconductors; etching; nanotechnology; organic compounds; scanning tunnelling microscopy; silicon; 200 nm; 30 nm; HF; HF vapour; SIMOX wafer; STM nanostructure; Si; Si diaphragm; Si fabrication; Si layer; Si nanostructure; Si-SiO2; TMAH solution; anisotropic Si etching; anodization; buried-SiO2 layer; double-layered diaphragm; etching; fabrication; hydrazine solution; hydrogen-terminated Si surface; nano-structure; oxide line pattern; supercritical drying; wet process; Actuators; Etching; Fabrication; Hafnium; Hydrogen; Scanning probe microscopy; Sensor phenomena and characterization; Surface cracks; Surface treatment; Tunneling;
Conference_Titel :
Micro Electro Mechanical Systems, 1997. MEMS '97, Proceedings, IEEE., Tenth Annual International Workshop on
Conference_Location :
Nagoya
Print_ISBN :
0-7803-3744-1
DOI :
10.1109/MEMSYS.1997.581791