An FT-CCD imager with true 2.4/spl times/2.4 /spl mu/m/sup 2/ pixels in double membrane poly-Si technology

Author

Peek, H.L. ; Verbugt, D.W. ; Beenhakkers, M.J. ; Huinink, W.F. ; Kleimann, K.C.

Author_Institution

Philips Imaging Technol., Eindhoven, Netherlands

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

907

Lastpage

910

Abstract

A 300 k-pixel frame-transfer image sensor ( 1/8 " optical format), with a pixel size of 2.4/spl times/2.4 /spl mu/m/sup 2/, the smallest ever published, is reported. This sensor follows the "VGA" standard (640/spl times/480 progressive scan, 60 fr./sec) and uses the following key processing technologies: only two, very thin ("membrane") poly-Si layers for gate electrodes; a modified Ti/TiN/W shunt-wiring technology; optimized process for narrow channel stops (1 /spl mu/m); optimized 0.2 /spl mu/m contact-hole technology in standard I-line photolithography; peristaltic-profiled doping for the buried CCD channel.

Keywords

CCD image sensors; doping profiles; integrated circuit metallisation; integrated circuit technology; membranes; silicon; 3E5 pixel; 480 pixel; 640 pixel; FT-CCD imager; Si; Ti-TiN-W; VGA standard; buried CCD channel; contact-hole technology; double membrane poly-Si technology; frame-transfer image sensor; gate electrodes; modified Ti/TiN/W shunt-wiring technology; narrow channel stops; peristaltic-profiled doping; standard I-line photolithography; Biomembranes; Charge coupled devices; Dielectrics; Electrodes; Etching; Image sensors; Pixel; Tin; Tungsten; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.554126

Filename

554126